Infineon IKWH40N65EH7XKSA1, Type N-Channel IGBT 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- N° de stock RS:
- 285-010
- Référence fabricant:
- IKWH40N65EH7XKSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
6,07 €
(TVA exclue)
7,344 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 3,035 € | 6,07 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 285-010
- Référence fabricant:
- IKWH40N65EH7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 208W | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | 40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Length | 20.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 208W | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature 40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Length 20.1mm | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon IGBT is a cutting edge IGBT module, utilising TRENCHSTOP IGBT7 technology for exceptional performance in high speed applications with low saturation voltage. Designed with a collector emitter voltage rating of 650 V, this module ensures enhanced efficiency and minimal energy loss, making it Ideal for demanding industrial environments. With its robust package and optimised thermal properties, this module offers outstanding robustness against humidity, ensuring consistent operation across various conditions.
High speed operation for efficient energy management
Low collector emitter saturation voltage boosts performance
Soft recovery diode ensures gentle switching
Humidity resistant design for reliability in diverse conditions
Optimized for two and three level topologies
Comprehensive product spectrum for tailored solutions
Qualified for industrial applications per rigorous JEDEC standards
Liens connexes
- Infineon IKWH40N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH50N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH100N65EH7XKSA1 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- Infineon IKWH75N65EH7XKSA1 80 A 650 V Through Hole
- Infineon IGBT 650 V, 3-Pin PG-TO-247
- Infineon CoolSiC Type N-Channel MOSFET 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R1K0M1XKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R450M1XKSA1
- Infineon CoolSiC Type N-Channel MOSFET 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1