Infineon IKWH75N65EH7XKSA1, Type N-Channel IGBT, 80 A 650 V, 3-Pin PG-TO-247-3-STD-NN4.8, Through Hole
- N° de stock RS:
- 285-014
- Référence fabricant:
- IKWH75N65EH7XKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 30 unités)*
98,28 €
(TVA exclue)
118,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 septembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 3,276 € | 98,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 285-014
- Référence fabricant:
- IKWH75N65EH7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 341W | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | 40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 20.1mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 341W | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature 40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 20.1mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- DE
The Infineon IGBT represents a ground breaking advancement in power electronics, leveraging the superior performance of 650 V TRENCHSTOP IGBT7 technology. Designed for high speed applications, this IGBT is engineered to deliver low saturation voltage and minimal switching losses, making it an Ideal choice for a variety of demanding applications, including industrial UPS, EV charging, and string inverters. Its robust construction ensures humidity resilience and optimised switching behaviour, positioning it as a reliable solution for both two and three level topologies. With its comprehensive product spectrum complemented by PSpice models, users can effectively integrate this IGBT into their systems, fully utilising its Advanced capabilities.
Delivers low collector emitter saturation voltage
Exhibits low switching losses for enhanced efficiency
Optimized for dynamic hard switching applications
Humidity robustness ensures operational reliability
Accommodates various power applications seamlessly
Qualified for industrial use under JEDEC standards
Supports robust power conversion solutions
Integrated with PSpice models for design flexibility
Liens connexes
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