Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1
- N° de stock RS:
- 348-881
- Référence fabricant:
- IQDH88N06LM5CGSCATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
10,21 €
(TVA exclue)
12,354 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,105 € | 10,21 € |
| 20 - 198 | 4,60 € | 9,20 € |
| 200 - 998 | 4,24 € | 8,48 € |
| 1000 - 1998 | 3,93 € | 7,86 € |
| 2000 + | 3,525 € | 7,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 348-881
- Référence fabricant:
- IQDH88N06LM5CGSCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS 5 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.86 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Reduced voltage overshoot
Increased maximum current capability
Fast switching
Liens connexes
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