Microchip VP3203 Type P-Channel MOSFET, 30 V Enhancement, 3-Pin TO-92 VP3203N3-G
- N° de stock RS:
- 332-980
- Référence fabricant:
- VP3203N3-G
- Fabricant:
- Microchip
Sous-total (1 sachet de 1000 unités)*
2 458,00 €
(TVA exclue)
2 974,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | Le Sachet* |
|---|---|---|
| 1000 + | 2,458 € | 2 458,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 332-980
- Référence fabricant:
- VP3203N3-G
- Fabricant:
- Microchip
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-92 | |
| Series | VP3203 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-92 | ||
Series VP3203 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source to drain diode
Liens connexes
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