Microchip VP0109 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0109N3-G

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N° de stock RS:
236-8964
Référence fabricant:
VP0109N3-G
Fabricant:
Microchip
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Marque

Microchip

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

140A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-92

Series

VP0109

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

1.6W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

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