Microchip VP0109 Type P-Channel MOSFET, 250 mA, 90 V Enhancement, 3-Pin TO-92 VP0109N3-G
- N° de stock RS:
- 236-8963
- Référence fabricant:
- VP0109N3-G
- Fabricant:
- Microchip
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 236-8963
- Référence fabricant:
- VP0109N3-G
- Fabricant:
- Microchip
Spécifications
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Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Microchip | |
| Series | VP0109 | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 250 mA | |
| Maximum Drain Source Voltage (Vds) | 90 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-92 | |
| Maximum Drain Source Resistance (Rds) | 8 Ω | |
| Mount Type | Through Hole | |
| Sélectionner tout | ||
|---|---|---|
Marque Microchip | ||
Series VP0109 | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 250 mA | ||
Maximum Drain Source Voltage (Vds) 90 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-92 | ||
Maximum Drain Source Resistance (Rds) 8 Ω | ||
Mount Type Through Hole | ||
The Microchip enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Liens connexes
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