Microchip VP0109 P-Channel MOSFET, 250 mA, 90 V, 3-Pin TO-92 VP0109N3-G

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N° de stock RS:
236-8963
Référence fabricant:
VP0109N3-G
Fabricant:
Microchip
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Marque

Microchip

Channel Type

P

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

90 V

Package Type

TO-92

Series

VP0109

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

1

The Microchip enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

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