Microchip VP0109 Type P-Channel MOSFET, 250 mA, 90 V Enhancement, 3-Pin TO-92 VP0109N3-G

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Sous-total (1 sachet de 1000 unités)*

842,00 €

(TVA exclue)

1 019,00 €

(TVA incluse)

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Prix par unité
Le Sachet*
1000 +0,842 €842,00 €

*Prix donné à titre indicatif

N° de stock RS:
236-8963
Référence fabricant:
VP0109N3-G
Fabricant:
Microchip
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Marque

Microchip

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

250mA

Maximum Drain Source Voltage Vds

90V

Package Type

TO-92

Series

VP0109

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8Ω

Channel Mode

Enhancement

The Microchip enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

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