STMicroelectronics SCT0 Type N-Channel MOSFET, 100 A, 1200 V, 7-Pin H2PAK-7 SCT020H120G3AG
- N° de stock RS:
- 330-232
- Référence fabricant:
- SCT020H120G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
25,26 €
(TVA exclue)
30,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 990 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 25,26 € |
| 10 - 99 | 22,74 € |
| 100 + | 20,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 330-232
- Référence fabricant:
- SCT020H120G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT0 | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 18.5mΩ | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 555W | |
| Typical Gate Charge Qg @ Vgs | 121nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT0 | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 18.5mΩ | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 555W | ||
Typical Gate Charge Qg @ Vgs 121nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
- STMicroelectronics SCT0 Silicon MOSFET 1200 V, 7-Pin HU3PAK SCT019HU120G3AG
- STMicroelectronics SCT0 Silicon MOSFET 1200 V HU3PAK SCT019H120G3AG
- STMicroelectronics SCT0 Silicon MOSFET 1200 V, 3-Pin HiP247 SCT070W120G3AG
- STMicroelectronics SCTH40N MOSFET 1200 V, 7-Pin H2PAK-7 SCTH40N120G2V-7
- STMicroelectronics SCT0 Silicon MOSFET 650 V, 7-Pin HU3PAK SCT027HU65G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT040H120G3AG