STMicroelectronics SCT0 MOSFET, 90 A, 1200 V, 7-Pin HU3PAK SCT019HU120G3AG
- N° de stock RS:
- 330-230
- Référence fabricant:
- SCT019HU120G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
26,94 €
(TVA exclue)
32,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 26,94 € |
| 10 - 99 | 24,24 € |
| 100 + | 22,36 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 330-230
- Référence fabricant:
- SCT019HU120G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT0 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 19.2mΩ | |
| Forward Voltage Vf | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 111.2nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT0 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 19.2mΩ | ||
Forward Voltage Vf 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 111.2nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Liens connexes
- STMicroelectronics SCT0 MOSFET 1200 V HU3PAK SCT019H120G3AG
- STMicroelectronics SCT0 Power MOSFET 650 V, 7-Pin HU3PAK SCT027HU65G3AG
- STMicroelectronics SCT0 Type N-Channel MOSFET 1200 V, 7-Pin H2PAK-7 SCT020H120G3AG
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- STMicroelectronics SCT0 MOSFET 1200 V, 3-Pin Hip-247 SCT070W120G3AG
- STMicroelectronics SCT SiC N-Channel MOSFET 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics STHU47 Type N-Channel MOSFET 600 V, 7-Pin HU3PAK STHU47N60DM6AG