onsemi NVH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NVH4L023N065M3S
- N° de stock RS:
- 327-806
- Référence fabricant:
- NVH4L023N065M3S
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
17,13 €
(TVA exclue)
20,73 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 450 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 17,13 € |
| 10 - 99 | 15,41 € |
| 100 + | 14,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 327-806
- Référence fabricant:
- NVH4L023N065M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NVH | |
| Package Type | TO-247-4L | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 187W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NVH | ||
Package Type TO-247-4L | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 187W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 23 mΩ device in the M3S TO-247-4L package. It is designed for high-efficiency, high-performance power conversion, providing low on-resistance and fast switching. Ideal for applications in automotive, industrial, and renewable energy systems, this MOSFET ensures reliable operation under demanding conditions.
Devices are Pb Free and are RoHS Compliant
Qualified for Automotive According to AEC Q101
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