onsemi NTH Type N-Channel MOSFET, 50 A, 650 V N, 4-Pin TO-247-4L NTH4L032N065M3S
- N° de stock RS:
- 327-805
- Référence fabricant:
- NTH4L032N065M3S
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
7,09 €
(TVA exclue)
8,58 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 435 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,09 € |
| 10 - 99 | 6,40 € |
| 100 - 499 | 5,88 € |
| 500 - 999 | 5,46 € |
| 1000 + | 4,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 327-805
- Référence fabricant:
- NTH4L032N065M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 187W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | 6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 187W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf 6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Halide Free and RoHS with Exemption 7a, Pb-Free 2LI | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 32 mΩ device in the M3S TO247-4L package. It features ultra-low gate charge (QG(tot) = 55 nC) and high-speed switching with low capacitance (Coss = 114 pF). The device is 100% avalanche tested and is halide-free and RoHS compliant with exemption 7a. It is also Pb-free on the second-level interconnection, making it suitable for demanding power electronics applications.
High efficiency and reduced switching losses
Robust and reliable operation in harsh environments
Ideal for automotive industrial and renewable energy applications
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