Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 86 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1

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N° de stock RS:
285-048
Référence fabricant:
ISC073N12LM6ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

120V

Package Type

PG-TDSON-8

Series

OptiMOS 6 Power Transistor

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is an Advanced N channel power transistor that excels in high frequency switching applications. Designed with innovative OptiMOS 6 technology, it delivers exceptional efficiency and performance. With a low on resistance and a high avalanche energy rating, this component is optimised for demanding industrial applications and ensures reliable operation even in challenging thermal environments. Its Compact PG TDSON 8 package further enhances its usability, making integration into various designs straightforward. The transistor operates seamlessly across a wide temperature range, facilitating versatility in numerous applications.

N channel design for enhanced performance

Optimised for high frequency switching

Low on resistance boosts energy efficiency

High avalanche rating ensures reliability

Compact package saves design space

RoHS compliant for sustainability

MSL 1 for easy soldering

Internal body diode improves functionality

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