Infineon OptiMOS SiC N-Channel MOSFET, 148 A, 150 V, 9-Pin PG-TTFN-9 IQD063N15NM5CGATMA1

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N° de stock RS:
284-938
Référence fabricant:
IQD063N15NM5CGATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

148 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS

Package Type

PG-TTFN-9

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is an advanced and high performance MOSFET designed for versatility in various industrial applications. This device offers superior efficiency thanks to its extremely low on resistance and exceptional thermal resistance, making it suitable for power management tasks where reliability is paramount. Its robust nature ensures 100% avalanche testing, providing users with confidence during operation. With a significant breakdown voltage and dynamic capabilities, the OptiMOS 5 series is engineered to enhance performance criteria while maintaining compliance with environmental standards.

High efficiency and low power loss
Superior thermal management for longevity
Extensive validation for industrial reliability
Wide operational temperature range
Low gate charge reduces switching losses
Competitive switching performance for PWM
RoHS and halogen free compliant

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