Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 19 A, 650 V, 8-Pin PG-HSOF-8 IPT65R155CFD7XTMA1

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-915
Référence fabricant:
IPT65R155CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

650V CoolMOS CFD7 SJ Power Device

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET is power device redefines efficiency and performance in high voltage applications with its advanced coolMOS technology. Designed specifically for resonant switching topologies, it boasts remarkable switching capabilities, ensuring significant energy savings and improved thermal management. The latest offering extends the voltage class options, acting as a worthy successor to previous models. Its ultra fast body diode combined with superior hard commutation robustness positions this device as the optimal choice for stringent industrial requirements, particularly in sectors like telecommunications and electric vehicle charging.

Ultra fast body diode boosts operational efficiency
High breakdown voltage ensures added safety
Best in class RDS(on) lowers conduction losses
Outstanding light load performance enhances efficiency
Optimised for server and solar applications

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