Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

Voir l’ensemble des MOSFETs

Sous-total (1 bobine de 2000 unités)*

11 914,00 €

(TVA exclue)

14 416,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Temporairement en rupture de stock
  • Expédition à partir du 02 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
la bobine*
2000 +5,957 €11 914,00 €

*Prix donné à titre indicatif

N° de stock RS:
284-899
Référence fabricant:
IPT65R040CFD7XTMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HSOF-8

Series

650V CoolMOS CFD7 SJ Power Device

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

347W

Typical Gate Charge Qg @ Vgs

97nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC

The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it Ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.

Ultra fast body diode minimises switching losses

Best in class RDS(on) for efficiency improvements

Robust against hard commutation for reliability

Handles increased bus voltage for safety

Optimised for high power density in Compact designs

Excels in light load conditions for industrial SMPS applications

Liens connexes