Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 23 A, 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-912
Référence fabricant:
IPT65R125CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

650V CoolMOS CFD7 SJ Power Device

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a cutting edge MOSFET designed to elevate power efficiency in demanding applications. This device features industry leading switching performance, encapsulated in the PG HSOF 8 package, optimising thermal management and maximising operational reliability. With a remarkable breakdown voltage of 650V, it is engineered to handle high power density and is an essential component for resonant switching topologies, such as LLC and phase shift full bridge converters. It not only meets the rigorous standards for efficiency and reliability but also supports designs that require increased power margins and enhanced performance across a range of operating temperatures.

Ultra fast body diode enhances performance
Reduces switching losses for energy efficiency
Excellent ruggedness for demanding applications
Supports increased bus voltage for safety
Outstanding light load efficiency for industrial use

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