Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 28 A, 650 V, 8-Pin PG-HSOF-8 IPT65R099CFD7XTMA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
284-907
Référence fabricant:
IPT65R099CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

650V CoolMOS CFD7 SJ Power Device

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an advanced 650V CoolMOS CFD7 power device is designed for exceptional performance in resonant switching topologies, including LLC and phase shift full bridge applications. With a focus on improved efficiency and thermal behaviour, this product is an ideal solution for demanding applications such as servers, telecom systems, and EV charging. The inclusion of a fast body diode enhances reliability, particularly in fast switching scenarios. As an evolution of the well established CFD2 series, this innovative MOSFET leverages superior switching characteristics and offers enhanced robustness against hard commutation events. Its design not only meets but exceeds industry standards for efficiency and thermal performance, making it an invaluable component for high power density solutions.

Ultra fast body diode for high speed performance
Minimises switching loss for optimal energy use
Exceptional ruggedness for added safety
Optimised for industrial SMPS applications
Fully JEDEC qualified for industrial settings
Supports high power density for compact designs
Engineered for phase shift full bridge integration

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