Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 34 A, 650 V, 8-Pin PG-HSOF-8 IPT65R080CFD7XTMA1

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-906
Référence fabricant:
IPT65R080CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a advanced power device represents a significant innovation in power management, showcasing exceptional efficiency and reliability in a compact footprint. Designed with cutting edge CoolMOS CFD7 technology, it effectively handles voltages up to 650V, making it ideal for demanding applications such as server power supplies, telecom infrastructure, and electric vehicle charging systems. Its unique ultra fast body diode ensures superior switching performance, enabling high efficiency in resonant switching topologies. By combining advanced thermal behaviour with minimal switching losses, this product is engineered to meet the stringent demands of modern power applications, driving system performance while optimising space.

Ultra fast body diode boosts switching
Minimal losses enhance system efficiency
High breakdown voltage for demanding tasks
Optimised for compact high power density
Excellent thermal performance under heavy load
Rugged design offers safety margin
Ideal for phase shift and LLC applications
Fully JEDEC qualified for industrial use

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