Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8

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9,06 €

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10,96 €

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1 - 99,06 €
10 - 998,16 €
100 - 4997,52 €
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1000 +6,25 €

*Prix donné à titre indicatif

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N° de stock RS:
284-900
Référence fabricant:
IPT65R040CFD7XTMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

650V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

97nC

Maximum Power Dissipation Pd

347W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC

The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it Ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.

Ultra fast body diode minimises switching losses

Best in class RDS(on) for efficiency improvements

Robust against hard commutation for reliability

Handles increased bus voltage for safety

Optimised for high power density in Compact designs

Excels in light load conditions for industrial SMPS applications

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