Infineon EasyPACK Dual SiC N-Channel MOSFET, 50 A, 1200 V, 23-Pin AG-EASY1B DF8MR12W1M1HFB67BPSA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
284-819
Référence fabricant:
DF8MR12W1M1HFB67BPSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon MOSFET Module integrates advanced CoolSiC Trench MOSFET technology, providing a robust solution engineered for efficiency in high performance applications. Ideal for solar and industrial uses, this module delivers exceptional electrical characteristics combined with mechanical reliability, thanks to its low inductive design and high current density capabilities. Designed with an integrated NTC temperature sensor, it ensures precise temperature management, allowing for safer and more reliable operation under varying conditions. This preliminary datasheet highlights a trusted solution engineered to meet the demands of contemporary electrical applications while ensuring compliance with industry standards.

Low inductive design enhances performance
Rugged mounting clamps improve stability
Qualified for industrial applications per IEC standards
PressFIT technology allows easy installation
NTC sensor enables accurate thermal management
High current ratings for versatile applications
Superior thermal resistance for high demand environments

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