Infineon EasyPACK Dual SiC N-Channel MOSFET, 25 A, 1200 V, 23-Pin AG-EASY1B DF16MR12W1M1HFB67BPSA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-815
Référence fabricant:
DF16MR12W1M1HFB67BPSA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

The Infineon MOSFET Module is a cutting edge solution designed for high performance applications, seamlessly integrating CoolSiC Trench MOSFET technology. Engineered to meet the demands of modern energy systems, this module ensures exceptional efficiency and reliability. With its low inductive design and optimal thermal management, it excels in environments where power density and space are critical. This advanced product is validated to comply with rigorous industry standards, guaranteeing its robustness in various operational settings.

Low inductive design enhances dynamic performance
Advanced PressFIT technology for easy installation
Integrated NTC sensor for temperature monitoring
High current density for superior power handling
Rugged mounting solutions ensure operational stability
Qualified for industrial applications per IEC standards

Liens connexes