Infineon EasyPACK SiC N-Channel MOSFET, 50 A, 1200 V, 23-Pin AG-EASY1B DF17MR12W1M1HFB68BPSA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-818
Référence fabricant:
DF17MR12W1M1HFB68BPSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B

Series

EasyPACK

Pin Count

23

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET Module is a state of the art, high performance solution designed for demanding applications in the industrial sector. This innovative module features a low inductive design that enhances operational efficiency while providing robust thermal management capabilities. Tailored for use with CoolSiC trench MOSFET technology, it delivers impressive current densities and is well suited for solar applications. With its competitive edge in both mechanical and electrical features, this module is built to support the evolving landscape of modern power electronics.

Optimised for high current density
Integrated NTC sensor enhances thermal monitoring
Rugged mounting ensures stability in diverse environments
PressFIT technology simplifies assembly and connections
Qualified for industrial applications per IEC standards
Ideal for solar energy systems
Low inductive design reduces switching losses

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