Infineon EasyPACK Dual SiC N-Channel MOSFET, 30 A, 1200 V, 23-Pin AG-EASY1B DF14MR12W1M1HFB67BPSA1

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-812
Référence fabricant:
DF14MR12W1M1HFB67BPSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Series

EasyPACK

Package Type

AG-EASY1B

Pin Count

23

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon MOSFET Module is designed with robust performance in mind, integrating advanced CoolSiC Trench MOSFET technology for enhanced efficiency and thermal management. This module not only excels in high current density applications but also ensures low inductive design, making it ideal for demanding industrial environments. Suitable for various applications, including photovoltaic systems, this module stands out for its reliability and compliance with international standards, reflecting quality and precision in engineering.

High performance NTC sensor for thermal monitoring
PressFIT technology simplifies installation and boosts durability
Isolation test voltage ensures reliability in extremes
Low on resistance maximizes power efficiency
Complies with IEC standards for industrial reliability
Rugged design withstands challenging environments

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