Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQE030N06NM5CGSCATMA1

Voir l’ensemble des MOSFETs
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N° de stock RS:
284-758
Référence fabricant:
IQE030N06NM5CGSCATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-WHTFN-9

Series

OptiMOS

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

100W

Typical Gate Charge Qg @ Vgs

39nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Automotive Standard

No

The Infineon MOSFET is a power transistor exemplifies cutting edge technology and performance, designed for efficient operation in demanding applications. Optimised for synchronous rectification, it assures superior thermal management and reliability, making it an Ideal choice for various industrial uses. Built around the OptiMOS 5 platform, it is tailored to operate effectively within a 60V range while maintaining a Compact footprint. Its robust design facilitates efficient switching, ensuring high performance while minimising losses.

Superior thermal resistance for reliability

Pb free plating for environmental compliance

100% avalanche testing for performance assurance

Exceptional gate charge for switching efficiency

Complies with halogen free standards

Ideal for rigorous industrial applications

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