Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- N° de stock RS:
- 284-752
- Référence fabricant:
- IQE022N06LM5CGSCATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
23,58 €
(TVA exclue)
28,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 25 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 4,716 € | 23,58 € |
| 50 - 95 | 4,484 € | 22,42 € |
| 100 - 495 | 4,148 € | 20,74 € |
| 500 - 995 | 3,818 € | 19,09 € |
| 1000 + | 3,676 € | 18,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 284-752
- Référence fabricant:
- IQE022N06LM5CGSCATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS | |
| Package Type | PG-TSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS | ||
Package Type PG-TSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET is a power transistor is engineered for high performance in switch mode power supplies, ensuring reliability across demanding applications. Designed within the OptiMOS 5 series, it delivers exceptional efficiency and low on resistance, making it an Ideal choice for synchronous rectification. With its Pb free and RoHS compliant construction, the product not only meets the latest environmental standards but also assures robust performance under varying conditions. This transistor features Advanced thermal management and is avalanche rated, ensuring safer operation and durability in critical settings. Its logic level drive capability allows for seamless integration into a wide range of electronic systems, further exemplifying its versatility and performance stability.
Optimised for high efficiency power conversion
Low on resistance for enhanced performance
Pb free design for environmental compliance
Avalanche tested for increased reliability
Logic level drive simplifies low voltage interfacing
Thermal resistance for efficient heat management
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