Infineon OptiMOS SiC N-Channel MOSFET, 310 A, 120 V, 8-Pin PG-HSOG-8-1 IAUTN12S5N018GATMA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
284-708
Référence fabricant:
IAUTN12S5N018GATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

310 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS

Package Type

PG-HSOG-8-1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon OptiMOS 5 automotive power MOSFET is designed specifically for automotive applications, ensuring outstanding performance and reliability. With its robust N channel enhancement mode configuration, this MOSFET excels in demanding conditions, offering extended qualifications that surpass industry standards. It effectively operates at temperatures up to 175°C and undergoes enhanced electrical testing, making it a vital component for innovative automotive designs. The device is optimised for minimal reverse recovery charge, which translates to higher efficiency and reduced energy loss in your applications. This combination of high durability and top tier performance establishes it as an essential choice for automotive engineers seeking reliable solutions for their designs.

Optimised for high reliability in automotive
Excellent thermal performance up to 175°C
Low on state resistance for energy efficiency
Avalanche rated for overcurrent protection
RoHS compliant for environmental standards
Robust design for high pulse currents
100% avalanche tested for quality assurance

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