Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 6.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
284-800
Référence fabricant:
ISZ56DP15LMATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

P

Maximum Continuous Drain Current

6.7 A

Maximum Drain Source Voltage

150 V

Package Type

PG-TSDSON-8 FL

Series

OptiMOS Power Transistor

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is an OptiMOS Power Transistor presents an innovative solution for high efficiency power management. This versatile P channel MOSFET is specifically engineered to accommodate both high and low switching frequency applications. Boasting a robust thermal resistance framework, the device ensures reliable performance even under challenging operational conditions. With its Pb free lead plating and compliance with RoHS standards, this transistor embodies environmentally friendly practices while maintaining exceptional electrical characteristics. Fully validated for industrial applications and 100% avalanche tested, the OptiMOS not only elevates system reliability but also enhances overall energy efficiency, making it an ideal choice for modern electronic designs.

Optimised for superior thermal performance
Halogen free for eco friendly applications
Robust under various industrial conditions
Logic level drive for simplified control
Validated per JEDEC standards
Easy integration into power circuits

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