Infineon OptiMOS SiC N-Channel MOSFET, 362 A, 100 V, 8-Pin PG-HSOF-8 IPT014N10N5ATMA1

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Indisponible
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N° de stock RS:
284-686
Référence fabricant:
IPT014N10N5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

362 A

Maximum Drain Source Voltage

100 V

Package Type

PG-HSOF-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features an innovative module delivers exceptional performance and efficiency for power conversion applications. Designed with cutting edge technology, it enhances thermal management and reduces energy loss. Tailored for switching applications, it provides robust solutions across a range of industrial settings. Its compact design and superior specifications make it ideal for various applications, ensuring reliability and longevity. This product is engineered to withstand demanding operational environments while maintaining top tier efficiency, allowing you to optimise your systems effortlessly. Embrace the future of power management with a product that combines advanced features and practicality, streamlining your design process and ensuring high efficiency throughout its operation.

Optimised for high frequency and efficiency
Robust thermal performance for reliability
Compact form factor fits tight spaces
Enhanced power density for advanced applications
Wide range of operating conditions supported
Streamlined design for easy integration
Environmentally friendly promoting energy conservation

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