Infineon OptiMOS SiC N-Channel MOSFET, 176 A, 100 V, 3-Pin PG-TO263-3 IPB018N10N5ATMA1

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N° de stock RS:
284-678
Référence fabricant:
IPB018N10N5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Package Type

PG-TO263-3

Series

OptiMOS

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an optimos 5 Power Transistor is designed for high frequency switching applications, ensuring superior performance in demanding environments. This advanced N channel MOSFET excels with a low on resistance, which significantly enhances efficiency and minimises heat generation. With a remarkable operating temperature range, it is built to withstand the rigours of modern electronic systems. Its compact D²PAK package simplifies integration into various electronic assemblies, making it a versatile choice for engineers looking to optimise their designs. This device has been fully qualified according to JEDEC standards, confirming its reliability for industrial applications.

Ideal for high frequency switching
Low on resistance enhances power management
Pb free lead plating meets regulations
Halogen free design complies with standards
Optimised for superior performance metrics
Qualified for industrial applications
Advanced thermal characteristics improve heat dissipation

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