Infineon OptiMOS SiC N-Channel MOSFET, 276 A, 100 V, 7-Pin PG-TO263-7 IPF015N10N5ATMA1

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Indisponible
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Options de conditionnement :
N° de stock RS:
284-681
Référence fabricant:
IPF015N10N5ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

276 A

Maximum Drain Source Voltage

100 V

Package Type

PG-TO263-7

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a OptiMOS 5 Power Transistor is a cutting edge component designed for high frequency switching applications. This advanced N channel MOSFET delivers an optimal blend of performance and efficiency, making it ideal for a variety of industrial applications where reliability is paramount. The transistor's remarkable low on resistance significantly reduces power loss, contributing to enhanced overall energy efficiency. With features proven through rigorous avalanche testing, users can benefit from peace of mind when integrating this component into their designs. Its Pb free lead plating and RoHS compliance ensure that environmental considerations are met, reflecting the manufacturer's commitment to sustainable practices.

Optimised for high frequency applications
Excellent gate charge x RDS performance
Very low on resistance reduces power loss
100% avalanche capability ensures reliability
RoHS compliant for eco friendly use
Halogen free for enhanced safety standards
Fully qualified per JEDEC for industrial use

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