Infineon XHP Dual SiC Dual N-Channel MOSFET, 1.2 kA, 1700 V Depletion Tray FF1200XTR17T2P5BPSA1

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
277-191
Référence fabricant:
FF1200XTR17T2P5BPSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

1.2 kA

Maximum Drain Source Voltage

1700 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Depletion

Transistor Material

SiC

Number of Elements per Chip

2

Pays d'origine :
DE
The Infineon IGBT module is a XHP 2 1700 V, 1200 A dual IGBT module with .XT interconnection technology and TRENCHSTOP IGBT5 for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications.

Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Less cooling effort for same output power
Enables higher system overload conditions

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