Infineon XHP Dual SiC Dual N-Channel MOSFET, 720 A, 3300 V Tray FF2600UXTR33T2M1BPSA1
- N° de stock RS:
- 277-195
- Référence fabricant:
- FF2600UXTR33T2M1BPSA1
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 277-195
- Référence fabricant:
- FF2600UXTR33T2M1BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current | 720 A | |
| Maximum Drain Source Voltage | 3300 V | |
| Series | XHP | |
| Package Type | Tray | |
| Mounting Type | Screw Mount | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | SiC | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current 720 A | ||
Maximum Drain Source Voltage 3300 V | ||
Series XHP | ||
Package Type Tray | ||
Mounting Type Screw Mount | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material SiC | ||
- Pays d'origine :
- DE
The Infineon XHP 2 CoolSiC MOSFET half bridge module 3.3 kV, 2.5 mΩ with XT interconnection technology for decarbonizing transportation.
Integrated body diode
XHP 2 housing
Energy efficiency
High power density
Enhanced lifetime
XHP 2 housing
Energy efficiency
High power density
Enhanced lifetime
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