Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK
- N° de stock RS:
- 219-338
- Référence fabricant:
- PSMN1R0-40YSHX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
3,36 €
(TVA exclue)
4,07 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 19 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 3,36 € |
| 10 - 99 | 3,02 € |
| 100 - 499 | 2,80 € |
| 500 - 999 | 2,58 € |
| 1000 + | 2,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-338
- Référence fabricant:
- PSMN1R0-40YSHX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NextPower-S3 Schottky-Plus technology | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NextPower-S3 Schottky-Plus technology | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control, battery protection, and load-switch/eFuse solutions. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
- Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK
- Nexperia NextPower-S3 Schottky-Plus Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YSHX
- Nexperia NextPower-S3 technology Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R4-40YLDX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN012-100YSFX
- Nexperia NextPower Type N-Channel MOSFET 100 V Enhancement, 5-Pin LFPAK PSMN015-100YSFX
- Nexperia PSM Type N-Channel MOSFET 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX
- Nexperia PSM Type N-Channel MOSFET 30 V Enhancement, 5-Pin LFPAK PSMN1R0-30YLEX
- Nexperia PSM Type N-Channel MOSFET 25 V Enhancement, 5-Pin LFPAK PSMN1R0-25YLDX