Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK
- N° de stock RS:
- 219-338
- Référence fabricant:
- PSMN1R0-40YSHX
- Fabricant:
- Nexperia
Offre groupée disponible
Sous-total (1 ruban de 1 unité)*
3,36 €
(TVA exclue)
4,07 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Ruban(s) | le ruban |
|---|---|
| 1 - 9 | 3,36 € |
| 10 - 99 | 3,02 € |
| 100 - 499 | 2,80 € |
| 500 - 999 | 2,58 € |
| 1000 + | 2,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-338
- Référence fabricant:
- PSMN1R0-40YSHX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NextPower-S3 Schottky-Plus technology | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NextPower-S3 Schottky-Plus technology | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control, battery protection, and load-switch/eFuse solutions. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
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