Nexperia NextPower-S3 Schottky-Plus technology Type N-Channel MOSFET, 290 A, 40 V Enhancement, 5-Pin LFPAK
- N° de stock RS:
- 219-337
- Référence fabricant:
- PSMN1R0-40YSHX
- Fabricant:
- Nexperia
Sous-total (1 bobine de 1500 unités)*
4 573,50 €
(TVA exclue)
5 533,50 €
(TVA incluse)
Ajouter 1500 unités pour bénéficier d'une livraison gratuite
En stock
- Plus 1 500 unité(s) expédiée(s) à partir du 23 février 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 3,049 € | 4 573,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-337
- Référence fabricant:
- PSMN1R0-40YSHX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NextPower-S3 Schottky-Plus technology | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NextPower-S3 Schottky-Plus technology | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
The Nexperia N-Channel MOSFET features Advanced TrenchMOS Super junction technology. This product has been designed and qualified for high performance power switching applications. It is designed for high-performance applications, including synchronous rectification, DC-to-DC converters, server power supplies, brushless DC motor control, battery protection, and load-switch/eFuse solutions. It offers high efficiency and reliable performance across a wide range of power management tasks.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Wave solder able
Superfast switching with soft recovery
Liens connexes
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