DiodesZetex Dual ZXMS6008DN8 2 Type N-Channel MOSFET, 0.9 A, 60 V Enhancement, 8-Pin SO-8 ZXMS6008DN8-13
- N° de stock RS:
- 216-348
- Référence fabricant:
- ZXMS6008DN8-13
- Fabricant:
- DiodesZetex
Sous-total (1 bobine de 2500 unités)*
840,00 €
(TVA exclue)
1 017,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 16 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,336 € | 840,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-348
- Référence fabricant:
- ZXMS6008DN8-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | ZXMS6008DN8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 2.13W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Width | 6 mm | |
| Length | 4.9mm | |
| Standards/Approvals | JEDEC, UL 94V-0, RoHS | |
| Height | 1.45mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series ZXMS6008DN8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 2.13W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Width 6 mm | ||
Length 4.9mm | ||
Standards/Approvals JEDEC, UL 94V-0, RoHS | ||
Height 1.45mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100 | ||
- Pays d'origine :
- CN
The DiodesZetex MOSFET is a dual self protected low-side IntelliFET MOSFET with logic level input. It integrates over temperature, overcurrent, overvoltage and ESD protected logic-level functionality. It is Ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
Compact high power dissipation package
Low input current
Short circuit protection with auto restart
Overvoltage protection
Thermal shutdown with auto restart
Overcurrent protection
Input ESD protection
High continuous current rating
Liens connexes
- Diodes Inc ZXMS6008DN8 Dual Plastic N-Channel MOSFET 60 V, 8-Pin SO-8 ZXMS6008DN8-13
- Diodes Inc ZXMS6008DN8 Plastic N-Channel MOSFET 60 V, 8-Pin SO-8 ZXMS6008N8-13
- Diodes Inc ZXMS6008N8 Dual Plastic N-Channel MOSFET 60 V, 8-Pin SO-8 ZXMS6008DN8Q-13
- Diodes Inc P-Channel MOSFET 20 V, 8-Pin SO-8 DMP2040USD-13
- Diodes Inc DMT616 N-Channel MOSFET 60 V, 8-Pin SO-8 DMT616MLSS-13
- Diodes Inc P-Channel MOSFET 20 V, 8-Pin SO-8 DMP2040USS-13
- Diodes Inc DMN6022 N-Channel MOSFET 60 V, 8-Pin SO-8 DMN6022SSS-13
- Infineon HEXFET Dual Silicon N-Channel MOSFET 30 V, 8-Pin SO-8 IRF7413ZTRPBF