DiodesZetex Dual 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT69M9LPDW-13

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
246-7559
Référence fabricant:
DMT69M9LPDW-13
Fabricant:
DiodesZetex
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

60V

Package Type

PowerDI5060-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0168Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Gate Source Voltage Vgs

16 V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes a dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±16 V It offers low on-resistance and fast switching speed It offers a wettable flank for improved optical inspection Thermally efficient package ideal for cooler running applications

Liens connexes

Recently viewed