DiodesZetex Dual 2 Type N-Channel MOSFET, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT69M9LPDW-13
- N° de stock RS:
- 246-7559
- Référence fabricant:
- DMT69M9LPDW-13
- Fabricant:
- DiodesZetex
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
7,03 €
(TVA exclue)
8,51 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 500 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,703 € | 7,03 € |
| 50 - 90 | 0,69 € | 6,90 € |
| 100 - 240 | 0,51 € | 5,10 € |
| 250 - 990 | 0,497 € | 4,97 € |
| 1000 + | 0,485 € | 4,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 246-7559
- Référence fabricant:
- DMT69M9LPDW-13
- Fabricant:
- DiodesZetex
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0168Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 33.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0168Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 33.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 60 V and maximum gate to source voltage is ±16 V It offers low on-resistance and fast switching speed It offers a wettable flank for improved optical inspection Thermally efficient package ideal for cooler running applications
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