STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK
- N° de stock RS:
- 215-242
- Référence fabricant:
- SCT070HU120G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
12,30 €
(TVA exclue)
14,88 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 595 unité(s) expédiée(s) à partir du 25 mai 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 12,30 € |
| 10 - 99 | 11,06 € |
| 100 + | 10,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-242
- Référence fabricant:
- SCT070HU120G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | HU3PAK | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type HU3PAK | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Operating Temperature 175°C | ||
Height 3.5mm | ||
Length 18.58mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode