STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- N° de stock RS:
- 215-239
- Référence fabricant:
- SCT060HU75G3AG
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 600 unités)*
6 990,00 €
(TVA exclue)
8 460,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 600 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | la bobine* |
|---|---|---|
| 600 + | 11,65 € | 6 990,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-239
- Référence fabricant:
- SCT060HU75G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 750 V | |
| Package Type | HU3PAK | |
| Series | SCT | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 750 V | ||
Package Type HU3PAK | ||
Series SCT | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- Pays d'origine :
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Very fast and robust intrinsic body diode
Liens connexes
- STMicroelectronics SCT SiC N-Channel MOSFET 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics SCT060HU Type N-Channel MOSFET 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG
- ROHM SCT SiC N-Channel MOSFET 1200 V, 7-Pin D2PAK SCT3040KW7TL
- STMicroelectronics SCT MOSFET 1200 V H2PAK-7
- STMicroelectronics SCT MOSFET 1200 V H2PAK-7 SCT025H120G3-7
- STMicroelectronics SCT0 MOSFET 1200 V, 7-Pin HU3PAK SCT019HU120G3AG
