Fairchild Semiconductor, Type N-Channel IGBT, 21 A 430 V, 3-Pin TO-220AB, Through Hole

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N° de stock RS:
166-2175
Référence fabricant:
ISL9V3040P3
Fabricant:
Fairchild Semiconductor
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Marque

Fairchild Semiconductor

Maximum Continuous Collector Current Ic

21A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

430V

Maximum Power Dissipation Pd

150W

Package Type

TO-220AB

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

15μs

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

±10 V

Maximum Operating Temperature

175°C

Series

EcoSPARK

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Energy Rating

300mJ

Discrete IGBTs, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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