Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

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N° de stock RS:
259-1528
Référence fabricant:
IKP10N60TXKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current

24 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

3

Maximum Power Dissipation

110 W

Package Type

PG-TO-220-3

The Infineon trenchstop low loss duo pack and it is field stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. It is Hard-switching 600 V, 10 A trenchstop IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept.

Highest efficiency and low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions

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