Infineon IGP10N60TXKSA1 IGBT, 24 A 600 V, 3-Pin TO-220, Through Hole
- N° de stock RS:
- 258-0985
- Référence fabricant:
- IGP10N60TXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
2,93 €
(TVA exclue)
3,546 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,465 € | 2,93 € |
| 20 - 48 | 1,32 € | 2,64 € |
| 50 - 98 | 1,23 € | 2,46 € |
| 100 - 198 | 1,145 € | 2,29 € |
| 200 + | 1,07 € | 2,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0985
- Référence fabricant:
- IGP10N60TXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 24A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Length | 29.95mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 24A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Length 29.95mm | ||
Automotive Standard No | ||
The Infineon Hard-switching 600 V, 10 A single TRENCHSTOP IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Liens connexes
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