Infineon, Type N-Channel Reverse Conducting IGBT, 65 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 225-0571
- Référence fabricant:
- IHW30N65R6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 240 unités)*
281,76 €
(TVA exclue)
341,04 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 240 - 240 | 1,174 € | 281,76 € |
| 480 - 480 | 1,115 € | 267,60 € |
| 720 + | 1,045 € | 250,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-0571
- Référence fabricant:
- IHW30N65R6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Continuous Collector Current Ic | 65A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 160W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.9mm | |
| Height | 5.3mm | |
| Series | IHW30N65R6 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Reverse Conducting IGBT | ||
Maximum Continuous Collector Current Ic 65A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 160W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 41.9mm | ||
Height 5.3mm | ||
Series IHW30N65R6 | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
High ruggedness and stable temperature behaviour
Low EMI
Pb-free lead plating, RoHS compliant
Powerful monolithic reverse-conducting diode with low forward voltage
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