Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 110-7756
- Référence fabricant:
- IKW30N60H3FKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 4 unités)*
12,62 €
(TVA exclue)
15,272 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 16 unité(s) expédiée(s) à partir du 12 janvier 2026
- Plus 24 unité(s) expédiée(s) à partir du 19 janvier 2026
- Plus 240 unité(s) expédiée(s) à partir du 05 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 4 - 16 | 3,155 € | 12,62 € |
| 20 - 96 | 2,42 € | 9,68 € |
| 100 - 196 | 2,093 € | 8,37 € |
| 200 - 496 | 1,975 € | 7,90 € |
| 500 + | 1,943 € | 7,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7756
- Référence fabricant:
- IKW30N60H3FKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 187 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Gate Capacitance | 1630pF | |
| Energy Rating | 1.72mJ | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 187 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 1630pF | ||
Energy Rating 1.72mJ | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Liens connexes
- Infineon IKW30N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW20N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW30N60DTPXKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW50N60TFKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW75N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW75N60TFKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW40N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole