Infineon IGW15N120H3FKSA1, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
Options de conditionnement :
N° de stock RS:
110-7153
Référence fabricant:
IGW15N120H3FKSA1
Fabricant:
Infineon
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Marque

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

217W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.05V

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free, RoHS, JEDEC

Series

TrenchStop

Energy Rating

2.5mJ

Automotive Standard

No

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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