STMicroelectronics STGF30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-220FP

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N° de stock RS:
204-9874
Référence fabricant:
STGF30H65DFB2
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

50 W

Number of Transistors

1

Package Type

TO-220FP

Pin Count

3

Pays d'origine :
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

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