STMicroelectronics STGF10NB60SD, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole
- N° de stock RS:
- 877-2873
- Référence fabricant:
- STGF10NB60SD
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
12,88 €
(TVA exclue)
15,58 €
(TVA incluse)
Ajouter 60 unités pour bénéficier d'une livraison gratuite
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 1,288 € | 12,88 € |
| 50 - 90 | 1,253 € | 12,53 € |
| 100 - 240 | 1,22 € | 12,20 € |
| 250 - 490 | 1,189 € | 11,89 € |
| 500 + | 1,159 € | 11,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 877-2873
- Référence fabricant:
- STGF10NB60SD
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 29A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 80W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 3.8μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | Low Drop | |
| Width | 4.6 mm | |
| Height | 10.4mm | |
| Length | 30.6mm | |
| Automotive Standard | No | |
| Energy Rating | 8mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current Ic 29A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 80W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 3.8μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series Low Drop | ||
Width 4.6 mm | ||
Height 10.4mm | ||
Length 30.6mm | ||
Automotive Standard No | ||
Energy Rating 8mJ | ||
- Pays d'origine :
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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