onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole

Voir l’ensemble des IGBTs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
202-5678
Référence fabricant:
NXH25C120L2C2SG
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Maximum Continuous Collector Current

25 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Number of Transistors

6

Package Type

DIP26

Configuration

3 Phase

Mounting Type

Through Hole

Channel Type

N

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 25 Ampere and 1600 Volts rectifiers, six 25 Ampere and 1200 Volts IGBTs with inverse diodes, one 25 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant

Liens connexes