onsemi, Type N-Channel IGBT Module, 35 A 650 V, 26-Pin DIP-26, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
N° de stock RS:
202-5682
Référence fabricant:
NXH35C120L2C2SG
Fabricant:
onsemi
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Marque

onsemi

Maximum Continuous Collector Current Ic

35A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

20mW

Package Type

DIP-26

Mount Type

Through Hole

Channel Type

Type N

Pin Count

26

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Maximum Gate Emitter Voltage VGEO

±2 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

40 mm

Length

73mm

Standards/Approvals

No

Series

CIB

Height

8mm

Automotive Standard

No

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance

6mm clearance distance between pin to heatsink

Solderable pins

Thermistor

Pb free

Halogen free or BFR free

RoHS compliant

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