onsemi NXH35C120L2C2SG, Type N-Channel IGBT Module, 35 A 650 V, 26-Pin DIP-26, Through Hole

Voir l’ensemble des IGBTs
Actuellement indisponible
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N° de stock RS:
202-5681
Référence fabricant:
NXH35C120L2C2SG
Fabricant:
onsemi
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Marque

onsemi

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

35A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

20mW

Package Type

DIP-26

Mount Type

Through Hole

Channel Type

Type N

Pin Count

26

Maximum Collector Emitter Saturation Voltage VceSAT

2.4V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±2 V

Maximum Operating Temperature

150°C

Height

8mm

Series

CIB

Standards/Approvals

No

Width

40 mm

Length

73mm

Automotive Standard

No

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance

6mm clearance distance between pin to heatsink

Solderable pins

Thermistor

Pb free

Halogen free or BFR free

RoHS compliant

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