onsemi, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- N° de stock RS:
- 185-7999
- Référence fabricant:
- FGAF40S65AQ
- Fabricant:
- onsemi
Sous-total (1 tube de 360 unités)*
655,56 €
(TVA exclue)
793,08 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 360 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 360 + | 1,821 € | 655,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 185-7999
- Référence fabricant:
- FGAF40S65AQ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 19.1mm | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Series | Trench | |
| Automotive Standard | No | |
| Energy Rating | 325mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 19.1mm | ||
Standards/Approvals Pb-Free and is RoHS | ||
Series Trench | ||
Automotive Standard No | ||
Energy Rating 325mJ | ||
Non conforme
- Pays d'origine :
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
Liens connexes
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