onsemi FGAF40S65AQ, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
- N° de stock RS:
- 185-8956
- Référence fabricant:
- FGAF40S65AQ
- Fabricant:
- onsemi
Sous-total (1 paquet de 3 unités)*
2,871 €
(TVA exclue)
3,474 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 80,00 €
Dernier stock RS
- 513 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 3 + | 0,957 € | 2,87 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 185-8956
- Référence fabricant:
- FGAF40S65AQ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 94W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 19.1mm | |
| Width | 15.3 mm | |
| Series | Trench | |
| Standards/Approvals | Pb-Free and is RoHS | |
| Automotive Standard | No | |
| Energy Rating | 325mJ | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 94W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 19.1mm | ||
Width 15.3 mm | ||
Series Trench | ||
Standards/Approvals Pb-Free and is RoHS | ||
Automotive Standard No | ||
Energy Rating 325mJ | ||
Non conforme
- Pays d'origine :
- KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.
Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application
Liens connexes
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